perhaps a stupid question, buti have problems understanding the 100k Life Cycle endurance of the external flash.
Does it mean that i can only erase about 100k times a 4//32/64 Kb Sector ?
Or does that mean every byte i write ?
Or everytime i´m using sFlash_writbuffer ?
For example if I erase sector 0x81000 . Than i write an uint8 array of lentgh 60 from 0x81000 to 0x8103B . After that i write again an uint array of 60 byte from 0x8103C to 0x81077 without erasing that sector .
Does that make me use “2”, “1” or more of the 100k cycle ?